Leading-edge power technologies for both high-and low-voltage applications combined with a full package range and innovative die bonding technologies exemplify ST’s innovation in power transistors belonging to the STPOWER family. ST offers a wide portfolio of power MOSFETs ranging from -100 to 1700 V, IGBTs with breakdown voltages ranging from 300 to 1700 V and power bipolar transistors ranging from 15 to 1700 V. Due to the improved thermal design of ST's power electronics systems, our silicon-carbide (SiC) MOSFETs ensure good robustness thanks to the industry’s highest temperature rating of 200 °C and voltage ranging from 650 to 2200 V. As well as, our Gallium Nitride on silicon substrate (GaN/Si) transistors allow highest efficiency and highest power density thanks to outstanding specific dynamic on-state resistance and small capacitances ranging to 100, 650 and 900 V.
Our wide STPOWER product portfolio combined with state-of-the art packaging (i.e. discrete and module) and protections for high reliability and safety helps designers find the right solutions for customized, high-efficiency applications that will last a long lifetime.
ST’s 10-year longevity commitment program ensures stable and continuous supply for customers
 | ST has certified several STPOWER high-voltage MOSFETs, IGBTs and Intelligent Power Modules (IPMs) for 10-year longevity. STPOWER SiC MOSFETs are also included in the program, with a minimum longevity commitment of 7 years. This program supports customer design investments by ensuring that selected devices are available during a minimum of 10 or 7 years from the notification date. Check-out the list of our certified STPOWER transistors and modules here. |
Wide bandgap transistor
SiC MOSFET from 650 V to 2200 V complemented by GaN transistor from 100 V, 650 V and 900 V allowing for increased power efficiency, smaller size, lighter weight, lower system cost or all of these together. Power MOSFET
Broad range of breakdown voltages from -100 V to 1700 V, with low gate charge and low on-resistance, combined with state-of-the art packaging.
IGBT
Breakdown voltages from 300 V to 1700 V. Low VCE(SAT) for reduced conduction losses. Improved switch-off energy spread versus increasing temperature.
Recommended for you
eDesignSuite
eDesignSuite is a comprehensive set of easy-to-use design-aid utilities ready to help you streamline the system development process with a wide range of ST products.
Power Management Design Center
Thermal-electrical Simulators for Components
Signal Conditioning Design Tool
NFC/RFID Calculators
Power Supply Design Tool
SMPS design, by topology, by type and by product PFC design with analog and digitial control Supports various PCB configurations 
LED Lighting Design Tool
Handles AC-DC and DC-DC design in common topologies Displays interactive and annotated schematic Provides current/voltage graphs, Bode plots, efficiency curves and power-loss data 
Digital Power Workbench
Provides a step-by-step optimized design of power section and control loop Generates the STM32Cube embedded software package for custom applications and allows firmware project generation, compatible with multiple STM32 IDEs 
Power Tree Designer
Specify input/output power for each node in the tree Check for consistency Design each individual node 
AC Switches Simulator
Select ratings and application waveforms Get junction temperature and blocking voltage graphs Search and sort suitable devices 
Rectifier Diodes Simulator
Select ratings and application waveforms Estimate power losses Search and sort suitable devices 
STPOWER Studio
Supports long mission profiles Provides power loss and temperature graphs Helps define heatsink thermal properties 
Twister Sim
Help select the right ViPOWER Automotive power device Supports load-compatibility, wiring harness optimization, fault condition impact and diagnostic analysis Supports various PCB configurations 
TVS Simulator
Specify system ratings and surge waveform Search and sort suitable devices 
Active Filters
Handles multi-stage-designs and common topologies Returns circuit component values Provides gain, phase and group delay graphs Low Pass, High Pass and Band Pass 
Comparators
Handles most common configurations Returns circuit components values Provides I/O signal waveforms Inverting, Non Inverting, Window 
Low side Current Sensing
Returns circuit component values Provides current error graphs 
High side Current Sensing
Provides current error graphs. Help to select the right High side current sensing and shunt devices. 
NFC Inductance
Input geometry and substrate properties Get antenna impedance 
UHF Link Budget
Enter forward and reverse link characteristics The tool returns link budget estimate 
NFC Tuning Circuit
Enter antenna parameter and matching target Select the topology of the matching network The tool returns component values for the desired design targets